Plasma treatment apparatus

ABSTRACT

In the case of generating plasma under atmospheric pressure, the particle generated due to generation of high-density plasma is to be a cause of a defect such as a point defect or a line defect of a display portion in a display device. The present invention is offered in view of the above situation, and provides a plasma treatment apparatus for suppressing generation of a particle. According to the present invention, plasma is generated in a limited minimum region to be treated by a plasma treatment over a substrate to be treated. Generation of a particle is suppressed to a minimum by providing a plurality of plasma generation units generating minimum plasma having a similar size as the limited minimum region, changing a relative position of the plurality of plasma generation units and the substrate to be treated, and performing a plasma treatment to a limited predetermined region.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a plasma treatment apparatus forforming an active layer and a wiring over a substrate. Moreover, thepresent invention relates to a plasma generation unit of a plasmatreatment apparatus for film formation, etching or surface modification.

[0003] 2. Related Art

[0004] A thin film transistor (TFT) formed over a substrate having aninsulating property is widely applied to an integrated circuit and thelike. Especially, the TFT is used a lot as a switching element in adisplay portion of a thin display device represented by a liquid crystaltelevision receiver or the like, and has been widely used for a portableterminal, a large-sized display device, and the like.

[0005] As for a display device using a conventional TFT, a film isformed over an entire surface of a substrate, and a TFT is formed byapplying photolithography, etching, and ashing. More than half of theseprocesses for manufacturing the TFT are often performed in vacuumequipment.

[0006] In recent years, a large-sized liquid crystal display device hasbeen attracting a lot of attention. Accordingly, a size of mother glassis enlarged, thereby enlarging a size of vacuum equipment and requiringa larger-scale facility investment.

[0007] In such the situation, a plasma treatment can be performed with aglow discharge maintained without shifting to an arc discharge evenunder atmospheric pressure by using a method for applying a pulsedelectric field as a plasma generating unit, which has been attracting alot of attention in recent years.

[0008] In the case of generating plasma under atmospheric pressure, aparticle is easily generated due to generation of high-density plasma.The particle is to be a cause of a defect such as a point defect or aline defect in a display portion of a display device.

SUMMARY OF THE INVENTION

[0009] The present invention is offered in view of the above problems,and it is an object of the invention to provide a plasma treatmentapparatus for suppressing generation of a particle.

[0010] Plasma is generated in a limited minimum region to be treated bya plasma treatment over a substrate to be treated. The minimum region isa region where an island semiconductor region (active layer) and awiring are formed in a whole region of a TFT substrate over which asemiconductor integrated circuit is formed, and an area ratio thereof tothe whole region of the substrate is only from several percent toseveral tens of percent. Consequently, generation of a particle issuppressed to a minimum by providing a plurality of plasma generationunits generating minute plasma in a limited minimum region to a plasmatreatment apparatus, changing a relative position of the plasmageneration unit and the substrate to be treated, and performing a plasmatreatment to a limited predetermined region.

[0011] Not only is a particle suppressed, but a plasma treatment can beperformed directly to a limited predetermined region by generatingplasma in a limited region having a similar size as the islandsemiconductor region and the wiring. Accordingly, a photolithographyprocess becomes unnecessary, which can reduce steps.

[0012] Further, sizes of electrodes which constitute a plasma generationunit are not required to be uniform, and electrodes of various sizes maybe mixed appropriately.

[0013] A plasma treatment apparatus comprising: a plurality of plasmageneration units composed of a plurality of opposed electrodes for filmformation, etching, or surface modification; a gas supply unit forintroducing a process gas into between the plurality of opposedelectrodes; wherein the plurality of plasma generation units arearranged linearly in one line or a plurality of lines; is given as aspecific structure of the present invention.

[0014] Further, a plasma treatment apparatus comprising: a plurality ofplasma generation units composed of a plurality of opposed electrodesfor performing film formation, etching, or surface modification over asubstrate to be treated; and a gas supply unit for introducing a processgas into between the plurality of opposed electrodes; wherein theplurality of plasma generation units are arranged linearly in one lineor a plurality of lines; wherein at least one of the plurality ofopposed electrodes has a length of equal to or less than 1 mm on a sideof the substrate to be treated; is also given.

[0015] Moreover, plasma treatment apparatus comprising: a plurality ofplasma generation units composed of a plurality of opposed electrodesfor performing film formation, etching, or surface modification over asubstrate to be treated; a gas supply unit for introducing a process gasinto between the plurality of opposed electrodes; a unit for forming apattern over the substrate to be treated by the plurality of plasmageneration units; wherein the plurality of plasma generation units arearranged linearly in one line or a plurality of lines; wherein at leastone of the plurality of opposed electrodes has a length of equal to orless than a square of a line width of the pattern on a side to betreated; is given.

[0016] As another structure, the pattern is a wiring pattern.

[0017] In the above structures, a unit for controlling a voltage appliedto a predetermined electrode at predetermined timing by connecting theplurality of electrodes to a pulsed power source and a computer througha control circuit is provided. In addition, a unit for controllingplasma generation from the predetermined electrode onto the substrate tobe treated by synchronizing timing of scanning a substrate stage towhich the substrate to be treated is fixed or an electrode unitcomprising the plurality of plasma generation units and of applying avoltage to the predetermined electrode is provided.

[0018] In addition, in the above structures, the plasma treatmentapparatus is provided with a unit such as a sensor for positioning oneof the plasma generation units to the substrate to be treated or thewiring pattern on the substrate to be treated.

[0019] As another structure, electrodes of the plurality of plasmageneration units can be formed by processing an alloy such as stainlesssteel or brass, or a conductive material such as copper or aluminum withthe use of a focused ion beam apparatus, photolithography, or a laserlithography apparatus. In other words, a plasma generation treatmentapparatus having a plasma generation unit in which a shape and a size ofan electrode are controlled can be used by applying these treatments.For instance, film formation, etching, or surface modification can beperformed appropriately in the most suitable condition by using a plasmatreatment apparatus having a plurality of plasma generation units inwhich sizes of electrodes are different from each other.

[0020] As another structure, the film formation, the etching, or thesurface modification is performed by applying a pulsed electric fieldinto between electrodes under atmospheric pressure or under pressureapproximate to atmospheric pressure.

[0021] The pressure approximate to atmospheric pressure means pressurein the range of from 600 Pa to 106000 Pa. However, not necessarilylimited to the values, the pressure includes a low-levelpositive-pressure condition due to a gas flow or the like.

[0022] Note that the plasma treatment apparatus described here denotesall apparatuses utilizing plasma such as a film formation apparatus byCVD, sputtering, or the like, a processing apparatus by etching, ashing,or the like, and a surface treatment apparatus by washing, surfacemodification, or the like.

[0023] The present invention includes a semiconductor devicemanufactured by using the above-described plasma treatment apparatus anda method for manufacturing a semiconductor by using the plasma treatmentapparatus. Further, the present invention also includes a method formanufacturing a semiconductor device in which one island semiconductorlayer over a substrate to be treated is formed by plasma from one plasmageneration unit and a semiconductor device manufactured by the method.

[0024] These and other objects, features and advantages of the presentinvention will become more apparent upon reading of the followingdetailed description along with the accompanied drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In the accompanying drawings:

[0026]FIG. 1 explains a plasma treatment apparatus of the presentinvention;

[0027]FIGS. 2A to 2D show a process gas flow of the present inventionschematically;

[0028]FIGS. 3A and 3B show an example of an atmospheric pressure plasmaapparatus used for carrying out the present invention;

[0029]FIGS. 4A to 4H show examples of electronics;

[0030]FIGS. 5A to 5E explain a plasma generation unit of the presentinvention;

[0031]FIGS. 6A to 6C show a process for manufacturing a semiconductordevice using a plasma treatment apparatus of the present invention;

[0032]FIGS. 7A to 7C show a process for manufacturing a semiconductordevice using a plasma treatment apparatus of the present invention;

[0033]FIGS. 8A to 8C show a process for manufacturing a semiconductordevice using a plasma treatment apparatus of the present invention; and

[0034]FIGS. 9A to 9D show a process for manufacturing a semiconductordevice using a plasma treatment apparatus of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

[0035] This application is based on Japanese Patent Application serialno. 2003-086384 filed in Japan Patent Office on Mar. 26, in 2003, thecontents of which are hereby incorporated by reference.

[0036] Although the present invention has been fully described by way ofexample with reference to the accompanying drawings, it is to beunderstood that various changes and modifications will be apparent tothose skilled in the art. Therefore, unless otherwise such changes andmodifications depart from the scope of the present invention hereinafterdefined, they should be construed as being included therein.

[0037] [Embodiment Mode 1]

[0038] The present invention relates to a method for performing atreatment or to a plasma treatment apparatus that can perform atreatment, by generating plasma to a limited region where an activelayer is formed or a limited region where a wiring is formed over asubstrate. Hereinafter, a plasma treatment apparatus having a pluralityof minute flat plate electrodes is described specifically with referenceto FIG. 1.

[0039] Two substrates 102 made of a material such as quartz, ceramic, orresin are arranged opposite to each other, thereby constructing a plasmachamber. A plurality of minute rectangular metal electrodes 103 isformed on the surface of the substrate 102. Length of at least one sideof the minute rectangular metal electrode is preferably equal to or lessthan 1 mm. Hence, microfabrication is preferably applied to these minutemetal electrodes by using photolithography, a focused ion beamapparatus, a laser lithography apparatus, or the like.

[0040] Specifically, the electrode can be formed by processing an alloysuch as stainless steel or brass, or a conductive material such ascopper or aluminum with the use of a photolithography, a focused ionbeam apparatus, or a laser lithography apparatus. On this occasion, aplasma treatment apparatus having a plasma generation unit for differentpurposes can be formed by controlling a shape and a size of an electrodeto be processed. For example, in the case of forming a wiring patternover a substrate, various kinds of wiring patterns can be formed at atime by performing a plasma treatment with the use of a plasma treatmentapparatus comprising a plasma generation unit composed of an electrodesuited to a width of a wiring pattern.

[0041] An alloy such as stainless steel or brass, or a conductivematerial such as copper or aluminum is used for the metal electrode 103.The plurality of metal electrodes 103 is formed inside of one side ofopposed substrates, and an electrode formed on the other side is to beone continuous electrode. Further, the electrode unit is not limited tothe one continuous electrode in the present invention, and a pluralityof metal electrodes can be formed on both sides of opposed substrates.Moreover, a partition wall is preferably provided so that gas isintroduced into each electrode separately.

[0042] Furthermore, an electrode surface is generally covered with adielectric film. Zirconium dioxide, titanium dioxide, barium titanate,or the like or a mixture thereof is used for the dielectric film. A gapbetween opposed electrodes is preferably equal to or less than 1 mm, butthe gap may be equal to or more than 1 mm because it depends on aquality of a dielectric material, a thickness of a dielectric film, anapplied voltage, or the like. In this case, an outlet for plasma ispreferably processed to be small by using an insulating resin, or thelike.

[0043] Thus, the one minute metal electrode 103 and the electrodeprovided on the other opposed substrate constitute one minute plasmageneration unit, and a plurality of the minute plasma generation unitconstitutes one electrode unit. A substrate to be treated 101 isdisposed in an appropriate position so as to be in contact with plasmagenerated from the electrode unit. In the case of worrying about plasmadamage, a plurality of electrodes are arranged so as not to contact withthe substrates to be treated directly, and a process gas is preferablysupplied to the substrate to be treated by optimization of a supplypressure.

[0044] Subsequently, process gas supply is described. A process gas isnecessary to be supplied to between the electrode unit and the substrateto be treated 101, and the plasma treatment apparatus comprises a gassupply unit and an exhaust unit. FIGS. 2A to 2D show a process gas flowsupplied from the gas supply unit schematically. In FIG. 2A, a structurein which a process gas is discharged onto the substrate to be treated101 from the plasma chamber is shown. In FIG. 2B, a structure in which aprocess gas passes through between the electrode unit and the substrateto be treated 101 is shown. Further, in the case of performing a plasmatreatment under atmospheric pressure, an exhaust unit is preferablyprovided, and a unit for exhausting a process gas in ways as shown inFIGS. 2C and 2D is preferably implemented.

[0045] For example, SiH₄, Si₂H₆, or a diluted gas with hydrogen, helium,or the like is used as a process gas in forming a Si film. A reactivegas such as CF₄, SF₆, Cl₂, or O₂ is used in etching and surfacemodification.

[0046] Plasma is generated in the plasma chamber by applying a pulsedelectric field into between the electrodes with a process gas introducedinto the electrode unit. The present invention is not always limited tounder atmospheric pressure, and the present invention can be carried outeven in a vacuum atmosphere. And in this case, an electric field isapplied by a high frequency power source. Each of the minute metalelectrodes 103 is connected to a pulsed power source 104 and a computer106 through a control circuit 105, and minute plasma can be generated ina predetermined position over the substrate to be treated by applying apulsed electric field into between predetermined electrodes atpredetermined timing. A relay circuit may be appropriately incorporatedin the control circuit 105. Further, the control circuit itself may beformed over the substrate 102.

[0047] An alignment unit for positioning the plasma generation unit tothe substrate to be treated or to a pattern formed over the substrate tobe treated by using a plasma treatment apparatus is necessary, and thecomputer 106 is also connected to the alignment unit 107.

[0048] A plasma treatment proceeds by changing the relative position ofthe substrate to be treated 101 and the electrode that are moved in an Xdirection and a Y direction. By using a plasma treatment apparatuscomprising the above-described structures, a plasma treatment can beperformed in a limited minimum region to be treated over the substrate,and generation of a particle can be suppressed.

[0049] [Embodiment Mode 2]

[0050] In the embodiment mode 1, a structure in which an electrode unitof a plasma treatment apparatus has a plurality of metal electrodes andone continuous opposite electrode is described. In this embodiment mode,a plasma treatment apparatus having another structure is described withreference to FIGS. 5A to 5E.

[0051]FIG. 5A shows a perspective view of a plasma generation unit 506having a cylindrical electrode, and FIGS. 5B to 5D show across-sectional view of the cylindrical electrode.

[0052] In FIG. 5B, a dotted line shows a path of a process gas 516, andreference numerals 501 and 502 denote electrodes made of a conductivemetal such as aluminum or copper, and a first electrode 501 is connectedto a power source 503. A cooling apparatus for circulating cooling watermay be connected to the first electrode 501. When the cooling apparatusis provided, a rise in temperature at the time of continuouslyperforming a surface treatment can be avoided by circulation of coolingwater, and efficiency can be improved by a continuous treatment.

[0053] A second electrode 502 surrounds the first electrode 501, and isconnected to ground electrically. And the first electrode 501 and thesecond electrode 502 are cylindrical having a nozzle-shaped gas pore ata tip thereof.

[0054] A space between the first electrode 501 and the second electrode502 is supplied with a process gas 516 from a gas supply unit (gascylinder) 505 through a valve 504. Then, atmosphere of the space isreplaced, and plasma is generated in the space by applying a highfrequency voltage (from 10 MHz to 500 MHz) to the first electrode 501from a power source 503 in this state.

[0055] And, when a reactive gas including chemically active excitedspecies such as ion or radical that is generated by the plasma isdischarged to a surface of a subject 513, a predetermined surfacetreatment can be performed on the surface of a subject 513.

[0056] Note that a process gas to be filled in the gas supply unit (gascylinder) 505 is appropriately selected in accordance with a kind of asurface treatment performed in a treatment chamber. An exhaust gas 507is introduced into an exhaust unit 509 through a valve 508.

[0057] In addition, whole of the process gas 516 is not used in a plasmaprocess, and an unreacted gas is included in the exhaust gas 507.Generally, the exhaust gas is detoxified in an exhaust gas processingapparatus, and is disposed or recovered. However, by making a componentof the unreacted gas in the exhaust gas reflux as the process gas 516through a filter 510, the utilization efficiency of the process gas canbe raised and the exhaust gas emission can be suppressed.

[0058]FIGS. 5C and 5D show a cylindrical plasma generation unit 506having a cross section different from that of FIG. 5B. A plasmageneration unit 506 shown in FIG. 5C has such a shape that the firstelectrode 501 is longer than the second electrode 502 and the firstelectrode 501 is acute-angled. Further, a plasma generation unit 506shown in FIG. 5D has such a shape that a reactive gas including thechemically active excited species generated between the first electrode501 and the second electrode 502 is discharged externally. Thecylindrical plasma generation unit is described as an example in thisembodiment mode, but not particularly limited to a cylindrical shape,and a plasma generation unit of any shape may be used.

[0059] Further, FIG. 5E shows a plurality of discharging nozzles ofplasma arranged in one axis direction.

[0060] The distance between the tip of the plasma generation unit andthe surface of the subject is required to be kept equal to or less than3 mm, preferably equal to or less than 1 mm, and more preferably equalto or less than 0.5 mm. For this reason, the distance between the plasmageneration unit and the surface of the subject may be kept constant byusing a distance sensor, for example.

[0061] According to the present invention using the plasma treatmentapparatus which can be operated under atmospheric pressure, time forvacuuming and relieving a pressure, which is necessary for a pressurereducing device, is not required, and a complicated vacuum apparatusneed not be arranged. Specifically, in the case of using a large-sizedsubstrate, a size of a chamber is enlarged consequently, and longerprocessing time is required to make inside of the chamber under reducedpressure. Therefore, the apparatus of the present invention that can beoperated under atmospheric pressure is effective in reducing amanufacturing cost.

[0062] [Embodiment Mode 3]

[0063] In this embodiment mode, in the case of manufacturing asemiconductor device by using a transparent substrate as a substrate tobe treated, a substrate with a large area as 600 mm×720 mm, 680 mm×880mm, 1000 mm×1200 mm, 1100 mm×1250 mm, 1150 mm×1300 mm, 1500 mm×1800 mm,1800 mm×2000 mm, 2000 mm×2100 mm, 2200 mm×2600 mm, or 2600 mm×3100 mm isused.

[0064] A manufacturing cost can be reduced by using such the large-sizedsubstrate. A glass substrate such as a barium borosilicate glass or analuminoborosilicate glass represented by #7059 glass and #1737 glass ofCorning, Inc. can be used for the substrate. Furthermore, varioustransparent substrates such as quartz, a semiconductor, plastics, aplastic film, metal, glass epoxy resin, and ceramic can be used.

[0065] [Embodiment Mode 4]

[0066] In this embodiment mode, a method for manufacturing asemiconductor device with the use of the plasma treatment apparatussshown in the embodiment modes 1 and 2 is described with reference toFIGS. 6A to 6C, 7A to 7C, 8A to 8C, and 9A to 9D. Note that a displaydevice exemplified here is an active matrix display device provided witha TFT for each pixel.

[0067]FIG. 6A shows a process for forming a conductive film to be a gateelectrode and a wiring. At first, a substrate 700 over which a TFT and alight-emitting device are to be formed is provided. Specifically, aglass substrate such as a barium borosilicate glass or analuminoborosilicate glass, a quartz substrate, a ceramic substrate, orthe like can be used as the substrate 700. Further, a metal substrate ora semiconductor substrate with an insulating film formed on the surfacethereof may be used. Although a substrate made of a flexible syntheticresin such as plastics generally tends to have a low heat resistancetemperature compared to the above-described substrate, the substrate canbe used if it can resist a processing temperature in a manufacturingprocess. A surface of the substrate 700 may be planarized by polishingwith the use of a technique such as CMP.

[0068] Subsequently, a conductive film 701 to be a gate electrode and awiring is formed on the surface of the substrate 700 by sputtering, CVD,or droplet discharging method. Specifically, a conductive material, forexample, metal such as aluminum, titanium, tantalum, molybdenum, silver,gold, or copper, or a metal compound thereof, or the like is used forthe conductive film. Note that the droplet discharging method here meansa method for forming a predetermined pattern by discharging a dropletincluding a predetermined composition from a pore, and includesink-jetting or the like in the category. By adopting droplet dischargingmethod, various wirings represented by a signal line and a scanningline, a gate electrode of a TFT, an electrode of a light-emittingdevice, and the like can be formed without using a mask for exposure. Inthe case of adopting droplet discharging method, a conductive film neednot be formed over the entire surface of the substrate, and may beselectively formed in the vicinity of a region where a gate electrodeand a wiring are to be formed.

[0069] Subsequently, a mask pattern 702 for forming a gate electrode anda wiring is formed over the conductive film 701. The mask pattern 702can be formed by selectively discharging a composition by dropletdischarging method. Further, resist may be applied to the entire surfaceof the substrate to form the mask pattern selectively byphotolithography. At this time, an unnecessary portion of resist can beetched by the plasma treatment apparatus. In the case of using theplasma treatment apparatus, etching need not be performed to the entiresurface of the substrate, and may be performed selectively by operatingnozzles of a nozzle body 705.

[0070] Subsequently, a gate electrode and a wiring 703 are formed byetching the conductive film 701 with the use of the mask pattern 702(FIG. 6B). Etching is performed by using a plasma treatment apparatushaving a film removal unit in which a plurality of discharging nozzlesof plasma is arranged in one axis direction, thereby removing anunnecessary portion of the conductive film. A reactive gas such as afluoride gas or a chloride gas is used for etching the conductive film701. The reactive gas need not be discharged to the entire surface ofthe substrate 700, and etching may be selectively performed by operatingnozzles of the nozzle body 705 in the vicinity of the region in whichthe mask pattern is formed.

[0071]FIG. 6C shows a process for removing the mask pattern 702. Theplasma treatment apparatus having the film removal unit in which aplurality of discharging nozzles of plasma is arranged in one axisdirection is used, thereby removing the mask pattern. In the case ofperforming an oxygen plasma treatment for surface modification by usingthe nozzle body 705, the treatment need not be performed to the entiresurface similarly as described above. The oxygen plasma treatment may beperformed selectively by operating nozzles of the nozzle body 705 in thevicinity of the region in which the mask pattern is formed.

[0072] Subsequently, a gate insulating film 706 and an islandnon-single-crystal semiconductor film 707 are formed by using a plasmatreatment apparatus of the present invention (FIG. 7A). A laminate bodythereof may be formed continuously by providing a plurality of thenozzle for forming each film, or may be laminated sequentially bychanging a reactive gas each time the nozzle body 705 is scanned. In thecase of forming the film, plasma is generated in a limited minimumregion, not in the whole area of the substrate 700. For example, thefilm is formed by supplying a plasma reactive gas from the nozzle body705 only in a region where the island semiconductor film is to be formedin the case of forming the semiconductor film. In the case of forming asilicon oxide film as the semiconductor film, an oxide gas such as amixed gas of silane and oxygen, or TEOS may be used as the reactive gas.The gate insulating film 706 may be formed over the entire surface ofthe substrate, or may be formed selectively in the vicinity of a regionwhere the TFT is formed.

[0073] Subsequently, a protective film 708 is formed by generatingplasma in a required region similarly as the gate insulating film andthe semiconductor film, and a mask pattern 709 for forming a channelprotective film is formed thereon (FIG. 7B). The mask pattern 709 may beformed by droplet discharging method or photolithography and plasmatreatment apparatus of the present invention similarly as in FIG. 6A.

[0074] Then, the protective film 708 is etched by using the mask pattern709, and a channel protective film 710 is formed (FIG. 7C). In the casethat the channel protective film is formed of a silicon nitride film, afluoride gas such as SF₆ may be used. Thereafter, the mask pattern 709is removed similarly as in FIG. 6C.

[0075] Then, a non-single-crystal semiconductor film of one conductivity712 including an impurity element is formed in order to form source anddrain regions of the TFT (FIG. 8A). Typically, an n-typenon-single-crystal semiconductor film represented by silicon is formed.In this case, a mixed gas of a silicide gas such as silane and a gasincluding an element belonging to Group 15 of the periodic tablerepresented by phosphine may be used as a reactive gas supplied from thenozzle body 705 in the present invention.

[0076] Afterwards, source and drain wirings 713 and 714 are formed. Thesource and drain wirings can be formed by photolithography and plasmatreatment apparatus of the present invention or droplet dischargingmethod. In the case of adopting droplet discharging method, wiringpatterns of the source and drain are formed directly by selectivelydischarging a conductive composition including a metal microparticlehaving a grain size of approximately 1 μm. Droplet discharging methodhas advantage of not requiring a mask that is necessary in the case ofphotolithography and of requiring only a minimum material.

[0077] Thereafter, the non-single-crystal semiconductor film of oneconductivity 712 located in the lower layer side of source and drainwirings is etched by using the previously formed source and drainwirings 713 and 714 as a mask (FIG. 8B). Etching is performed bydischarging a plasma fluoride gas from the nozzle body 705. In thiscase, quantity of the reactive gas to be discharged is made different ina wiring forming region and other region, and the gas is discharged inlarge quantity onto an exposed region of the non-single-crystal siliconfilm, thereby performing etching to an appropriate degree and reducingthe consumption of the reactive gas.

[0078] Subsequently, a transparent pixel electrode 720 is formed asshown in FIG. 8C. The pixel electrode 720 can be formed directly into apredetermined pattern over the substrate by droplet discharging methodusing a composition including powder of a conductive particle such asindium tin oxide, tin oxide, or zinc oxide. Thus, resistance of acontact portion particularly with the non-single-crystal semiconductorfilm of one conductivity 712 can be lowered by using a composition inwhich a particle of indium tin oxide is dispersed in a conductivepolymer as a composition of the pixel electrode.

[0079] Further, the TFT is formed by using the plasma treatmentapparatus having the nozzle body 705 in the above-describedmanufacturing step; however, the TFT can be formed efficiently byproviding one plasma treatment apparatus with a nozzle body comprisingnozzles of different sizes and by using a nozzle appropriate for thetreatment. A different structure from the above-described manufacturingprocess is shown in FIGS. 9A to 9D.

[0080] For instance, the non-single-crystal semiconductor film 707, theprotective film 710, and the non-single-crystal semiconductor film ofone conductivity 712 are provided in advance, and etching is performedby using the source and drain wirings 713 and 714 as a mask, therebyforming a source region and a drain region as shown in FIG. 8B. However,a following etching becomes unnecessary by forming the source region andthe drain region separately with the use of a plasma treatment apparatushaving a nozzle body 718 comprising minuter nozzles as shown in FIG 9A.Accordingly, the channel protective film 710 also becomes unnecessary,and steps can be symplified drastically.

[0081] Besides, subsequently, a protective film 715 may be formed overthe entire surface as shown in FIG. 9B. In this case, a film is formedby discharging a plasma reactive gas from the nozzle body 718.Typically, a silicon nitride film is used for the protective film 715.

[0082] After forming the protective film 715, a contact hole is formedin the protective film 715 for electrically connecting a drain electrodeand a pixel electrode that is formed later (FIG. 9C). The contact holecan be formed by applying photolithography; however, a contact hole 717can be formed here without a mask by selectively discharging the plasmareactive gas from the nozzle body 718 onto a region where the contacthole is formed. At this time, a plasma treatment apparatus having anozzle corresponding a diameter of the contact hole is preferably used.Here, the minuter nozzle body 718 than the nozzle body 705 used in orderto form the above-described semiconductor layer is used. The TFT can beformed efficiently by providing one plasma treatment apparatus with anozzle body comprising nozzles having different sizes and by using anozzle appropriate for the treatment.

[0083] Afterwards, a pixel electrode 720 is formed as shown in FIG. 9D.The pixel electrode can be formed directly into a predetermined patternover the substrate by droplet discharging method using a compositionincluding powder of a conductive particle such as indium tin oxide, tinoxide, or zinc oxide.

[0084] According to the above-described processes, the active matrixdisplay device provided with the TFT in each pixel can be formed byusing the plasma treatment apparatus.

[0085] [Embodiment Mode 5]

[0086] An example of the plasma treatment apparatus used in the aboveembodiment modes is described with reference to FIGS. 3A and 3B.

[0087]FIGS. 3A and 3B are a top plan view and a cross-sectional view ofthe apparatus respectively. A subject 303 such as a glass substrate or aresin substrate represented by a plastic substrate of a desired size isplaced in a cassette 306 in the FIGS. 3A and 3B. Horizontal transport isgiven as a method for transporting the subject 303; however, verticaltransport may be adopted for the purpose of reducing an area occupied bya transporting machine or for other purposes.

[0088] In a transport chamber 307, the subject 303 disposed in thecassette 306 is transported to a plasma treatment chamber 308 by atransport mechanism 305 (such as a robot arm). An air-flow controllingunit 300, rails 304 a and 304 b for transporting a plasma generationunit 302 of the present invention, a transport unit for transporting thesubject 303, and the like are installed in the plasma treatment chamber308 adjacent to the transport chamber 307. Further, a known heating unitsuch as a lamp may be appropriately provided.

[0089] The air-flow controlling unit 300 aims at protection against dustand controls air flow to shut out outside air by using an inert gasdischarged from a discharging nozzle 301. The plasma generation unit 302moves to a predetermined position using the rail 304 a disposed in atransport direction of the subject 303 or the rail 304 b disposed in aperpendicular direction to the transport direction of the subject 303.

[0090] [Embodiment Mode 6]

[0091] In this embodiment mode, various electronics completed byemploying the present invention is described. The following can be givenas such the electronics: a video camera; a digital camera; a goggle typedisplay (head mounted display); a navigation apparatus; an audioreproducing apparatus (car audio, an audio component, and the like); alaptop personal computer; a game machine; a portable informationterminal (a mobile computer, a cellular phone, a portable game machine,an electronic book, or the like); an image reproducing device with arecording medium (specifically, a device capable of reproducing arecording medium such as a Digital Versatile Disk (DVD) and having adisplay that can display the image); and the like. Practical examples ofthese electrics are shown in FIGS. 4A to 4H.

[0092]FIG. 4A shows a display device including a case 4001, a supportingsection 4002, a display portion 4003, speaker portions 4004, a videoinput terminal 4005, and the like. The present invention can be appliedto manufacturing an integrated circuit comprising the display portion4003. The display device shown in FIG. 4A is completed by applying thepresent invention. In addition, the display device includes all displaydevices for displaying information, including ones for personalcomputers, for TV broadcasting reception of from 20 inches to 80 inches,and for advertisement.

[0093]FIG. 4B shows a digital still camera including a main body 4101, adisplay portion 4102, an image receiving portion 4103, operation keys4104, an external connection port 4105, a shutter 4106, and the like.The present invention can be applied to manufacturing an integratedcircuit comprising the display portion 4102. The digital still camerashown in FIG. 4B is completed by applying the present invention.

[0094]FIG. 4C shows a laptop personal computer including a main body4201, a case 4202, a display portion 4203, a keyboard 4204, an externalconnection port 4205, a pointing mouse 4206, and the like. The presentinvention can be applied to manufacturing an integrated circuitcomprising the display portion 4203. The lap top personal computer shownin FIG. 4C is completed by applying the present invention.

[0095]FIG. 4D shows a mobile computer including a main body 4301, adisplay portion 4302, a switch 4303, operation keys 4304, an infraredport 4305, and the like. The present invention can be applied tomanufacturing an integrated circuit comprising the display portion 4302.The mobile computer shown in FIG. 4D is completed by applying thepresent invention.

[0096]FIG. 4E shows a portable image reproducing device with a recordingmedium (specifically, a DVD player) including a main body 4401, a case4402, a display portion A 4403, a display portion B 4404, a recordingmedium (DVD or the like) reading portion 4405, operation keys 4406,speaker portions 4407, and the like. The display portion A 4403 mainlydisplays image information whereas the display portion B 4404 mainlydisplays text information, and the present invention can be applied tomanufacturing an integrated circuit comprising the display portion A4403 and the display portion B 4404. Note that the image reproducingdevice with a recording medium includes a domestic game machine and thelike. The DVD player shown in FIG. 4E is completed by applying thepresent invention.

[0097]FIG. 4F shows a goggle type display (head mounted display)including a main body 4501, display portions 4502, and arm portions4503. The present invention can be applied to manufacturing anintegrated circuit comprising the display portions 4502. The goggle typedisplay shown in FIG. 4F is completed by applying the present invention.

[0098]FIG. 4G shows a video camera including a main body 4601, a displayportion 4602, a case 4603, an external connection port 4604, a remotecontrol receiving portion 4605, an image receiving portion 4606, abattery 4607, an audio input portion 4608, operation keys 4609, an eyepiece portion 4610, and the like. The present invention can be appliedto manufacturing an integrated circuit comprising the display portion4602. The video camera shown in FIG. 4G is completed by applying thepresent invention.

[0099]FIG. 4H shows a cellular phone including a main body 4701, a case4702, a display portion 4703, an audio input portion 4704, an audiooutput portion 4705, operation keys 4706, an external connection port4707, an antenna 4708, and the like. The present invention can beapplied to manufacturing an integrated circuit comprising the displayportion 4703. If the display portion 4703 displays white letters onblack background, the cellular phone consumes less power. The cellularphone shown in FIG. 4H is completed by applying the present invention.

[0100] As described above, the present invention can be fairly widelyapplied to electronics of all fields. In addition, a semiconductordevice of any structure described in the present invention may beapplied to the electronics shown here.

[0101] Plasma can be generated in a limited minimum region of asubstrate to be treated and a particle generated in a plasma treatmentcan be reduced by using a plasma treatment apparatus comprising aplurality of minute plasma generation units. Consequently, performanceof a product manufactured by applying a plasma treatment is improved,and yield is also improved.

[0102] Further, plasma treatment can be performed to a predeterminedregion, thereby eliminating a photolithography. As a result, productiontime for a product manufactured by applying a plasma treatment isshortened. Moreover, production cost decreases since number of stepsdecreases.

What is claimed is:
 1. A plasma treatment apparatus comprising: aplurality of plasma generation units comprising a first electrode and aplurality of second electrodes opposed to the first electrode; and a gassupply unit for introducing a process gas into a space between the firstelectrode and the plurality of second electrodes, wherein the pluralityof plasma generation units are arranged linearly in one line or aplurality of lines.
 2. A plasma treatment apparatus comprising: aplurality of plasma generation units comprising a first electrode and aplurality of second electrodes opposed to the first electrode; and a gassupply unit for introducing a process gas into a space between the firstelectrode and the plurality of second electrodes, wherein the pluralityof plasma generation units are arranged linearly in one line or aplurality of lines; and wherein at least one of the plurality of secondelectrodes has a length of equal to or less than 1 mm on a side of anobject to be treated.
 3. A plasma treatment apparatus comprising: aplurality of plasma generation units comprising a first electrode and aplurality of second electrodes opposed to the first electrode forforming a pattern on an object to be treated; and a gas supply unit forintroducing a process gas into a space between the first electrode andthe plurality of second electrodes, wherein the plurality of plasmageneration units are arranged linearly in one line or a plurality oflines; and wherein at least one of the plurality of second electrodeshas a length of equal to or less than a square of a line width of thepattern on a side of the object to be treated.
 4. A plasma treatmentapparatus according to claim 3, wherein the pattern is a wiring pattern.5. A plasma treatment apparatus according to claim 2, wherein a unit forpositioning one of the plurality of plasma generation units to theobject to be treated or the pattern on the object to be treated isprovided.
 6. A plasma treatment apparatus according to claim 3, whereina unit for positioning one of the plurality of plasma generation unitsto the object to be treated or the pattern on the object to be treatedis provided.
 7. A plasma treatment apparatus according to claim 1,further comprising: a unit for controlling a voltage applied to apredetermined electrode through a control circuit; and a unit forcontrolling plasma generation on the object to be treated bysynchronizing timing of scanning a stage or the plurality of plasmageneration units and timing of applying a voltage to the predeterminedelectrode.
 8. A plasma treatment apparatus according to claim 2, furthercomprising: a unit for controlling a voltage applied to a predeterminedelectrode through a control circuit; and a unit for controlling plasmageneration on the object to be treated by synchronizing timing ofscanning a stage or the plurality of plasma generation units and timingof applying a voltage to the predetermined electrode.
 9. A plasmatreatment apparatus according to claim 3, further comprising: a unit forcontrolling a voltage applied to a predetermined electrode through acontrol circuit; and a unit for controlling plasma generation on theobject to be treated by synchronizing timing of scanning a stage or theplurality of plasma generation units and timing of applying a voltage tothe predetermined electrode.
 10. A plasma treatment apparatus accordingto claim 1, wherein one of the plurality of second electrodes isprocessed by using a focused ion beam apparatus, photolithography, or alaser lithography apparatus.
 11. A plasma treatment apparatus accordingto claim 2, wherein one of the plurality of second electrodes isprocessed by using a focused ion beam apparatus, photolithography, or alaser lithography apparatus.
 12. A plasma treatment apparatus accordingto claim 3, wherein one of the plurality of second electrodes isprocessed by using a focused ion beam apparatus, photolithography, or alaser lithography apparatus.
 13. A plasma treatment apparatus accordingto claim 1, wherein the first electrode and the plurality of secondelectrodes is covered with a dielectric.
 14. A plasma treatmentapparatus according to claim 2, wherein the first electrode and theplurality of second electrodes is covered with a dielectric.
 15. Aplasma treatment apparatus according to claim 3, wherein the firstelectrode and the plurality of second electrodes is covered with adielectric.
 16. A plasma treatment apparatus according to claim 1,wherein the film formation, the etching, or the surface modification isperformed by applying a pulsed electric field into the space between thefirst electrode and the plurality of second electrodes under atmosphericpressure or under pressure approximate to atmospheric pressure.
 17. Aplasma treatment apparatus according to claim 2, wherein the filmformation, the etching, or the surface modification is performed byapplying a pulsed electric field into the space between the firstelectrode and the plurality of second electrodes under atmosphericpressure or under pressure approximate to atmospheric pressure.
 18. Aplasma treatment apparatus according to claim 3, wherein the filmformation, the etching, or the surface modification is performed byapplying a pulsed electric field into the space between the firstelectrode and the plurality of second electrodes under atmosphericpressure or under pressure approximate to atmospheric pressure.